Diodes IncorporatedBFS17NTAHF-BJT
Trans RF BJT NPN 11V 0.05A 350mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the BFS17NTA RF bi-polar junction transistor, developed by Diodes Zetex, can properly function in the event of high radio frequency power situations. This product's minimum DC current gain is 56@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.5@5mA@25mA V. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |