Infineon Technologies AGBFS17PE6327HTSA1HF-BJT
Trans RF BJT NPN 15V 0.025A 280mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 25 | |
| 15 | |
| <20 | |
| 0.4@1mA@10mA | |
| 2.5 | |
| 0.025 | |
| 0.001 to 0.06 | |
| 100000 | |
| 10000 | |
| 5V/20mA | |
| 20@25mA@1V|40@2mA@1V | |
| 2 to 30|30 to 50 | |
| 0.9 | |
| 0.55 | |
| 280 | |
| 10(Typ) | |
| 13 | |
| 21.5(Typ) | |
| 2500(Typ) | |
| 5(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
In addition to offering the benefits of traditional BJTs, the BFS17PE6327HTSA1 RF amplifier from Infineon Technologies is perfect for high radio frequency power situations. This product's minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |