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Infineon Technologies AGBFS17WH6327XTSA1HF-BJT
Trans RF BJT NPN 15V 0.025A 280mW Automotive AEC-Q101 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 25 | |
| 15 | |
| <20 | |
| 0.4@1mA@10mA | |
| 2.5 | |
| 0.025 | |
| 0.001 to 0.06 | |
| 100000 | |
| 10000 | |
| 5V/20mA | |
| 40@2mA@1V|20@25mA@1V | |
| 2 to 30|30 to 50 | |
| 0.9 | |
| 0.55 | |
| 280 | |
| 11(Typ) | |
| 14 | |
| 22.5(Typ) | |
| 2500(Typ) | |
| 5 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-323 |
| 3 | |
| Leitungsform | Gull-wing |
Look no further than the BFS17WH6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This product's minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |