NXP SemiconductorsBFS19,215GP BJT
Trans GP BJT NPN 20V 0.03A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.21.00.95 | |
SVHC | Yes |
Automotive | Yes |
PPAP | Unknown |
Befestigung | Surface Mount |
Verpackungshöhe | 1(Max) |
Verpackungsbreite | 1.4(Max) |
Verpackungslänge | 3(Max) |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Design various electronic circuits with this versatile NPN BFS19,215 GP BJT from NXP Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.