NXP SemiconductorsBFS19,215GP BJT

Trans GP BJT NPN 20V 0.03A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Design various electronic circuits with this versatile NPN BFS19,215 GP BJT from NXP Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

A datasheet is only available for this product at this time.