NXP SemiconductorsBFU610F,115HF-BJT
Trans RF BJT NPN 5.5V 0.01A 136mW 4-Pin(3+Tab) DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 16 | |
| 5.5 | |
| <20 | |
| 2.5 | |
| 0.01 | |
| 0.001 to 0.06 | |
| 100 | |
| 2V/10mA | |
| 90@1mA@2V | |
| 50 to 120 | |
| 0.227 | |
| 0.019 | |
| 136 | |
| 3.5(Typ) | |
| 26 | |
| 15000(Typ) | |
| 1.7(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 1.35(Max) mm |
| Verpackungslänge | 2.2(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| 4 |
This BFU610F,115 RF amplifier from NXP Semiconductors is designed to operate at higher RF frequencies. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |