NXP SemiconductorsBFU630F,115HF-BJT
Trans RF BJT NPN 5.5V 0.03A 200mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single Dual Emitter | |
| 1 | |
| 16 | |
| 5.5 | |
| <20 | |
| 2.5 | |
| 0.03 | |
| 0.001 to 0.06 | |
| 100 | |
| 2.5V/30mA | |
| 90@5mA@2V | |
| 50 to 120 | |
| 0.332 | |
| 0.047 | |
| 200 | |
| 12.5(Typ) | |
| 27 | |
| 27.5(Typ) | |
| 21000(Typ) | |
| 1.3(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 1.35(Max) mm |
| Verpackungslänge | 2.2(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| 4 | |
| Leitungsform | Flat |
Use this BFU630F,115 RF amplifier from NXP Semiconductors in your circuit so that it is operating at high RF frequencies. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |