NXP SemiconductorsBFU630F,115HF-BJT
Trans RF BJT NPN 5.5V 0.03A 200mW 4-Pin(3+Tab) DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| 4 |
Use this BFU630F,115 RF amplifier from NXP Semiconductors in your circuit so that it is operating at high RF frequencies. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |