NXP SemiconductorsBFU660F,115HF-BJT
Trans RF BJT NPN 5.5V 0.06A 225mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 1.35(Max) mm |
| Verpackungslänge | 2.2(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| 4 | |
| Leitungsform | Flat |
In addition to offering the benefits of traditional BJTs, the BFU660F,115 RF amplifier from NXP Semiconductors is perfect for high radio frequency power situations. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |