| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.75 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| Stiftanzahl | 4 |
| Leitungsform | Flat |
Compared to other transistors, the BFU690F,115 RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 150 °C.
