NXP SemiconductorsBFU710F,115HF-BJT
Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 10 | |
| 2.8 | |
| <20 | |
| 1 | |
| 0.01 | |
| 0.001 to 0.06 | |
| 100 | |
| 2.5V/10mA | |
| 200@1mA@2V | |
| 200 to 300 | |
| 0.262 | |
| 0.021 | |
| 136 | |
| 5.5(Typ) | |
| 30 | |
| 19.5(Typ) | |
| 43000(Typ) | |
| 1.45(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| 4 |
The BFU710F,115 RF amplifier from NXP Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |