NXP SemiconductorsBFU725F/N1,115HF-BJT
Trans RF BJT NPN 2.8V 0.04A 136mW 4-Pin SO T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 10 | |
| 2.8 | |
| <20 | |
| 1 | |
| 0.04 | |
| 0.001 to 0.06 | |
| 100 | |
| 2V/25mA | |
| 160@10mA@2V | |
| 120 to 200 | |
| 0.4 | |
| 0.07 | |
| 136 | |
| 9(Typ) | |
| 28(Max) | |
| 19(Typ) | |
| 55000(Typ) | |
| 1.1(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.35(Max) mm |
| Verpackungslänge | 2.2(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SO |
| 4 | |
| Leitungsform | Gull-wing |
Superior characteristics of this BFU725F/N1,115 RF amplifier from NXP Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |