NXP SemiconductorsBFU725F/N1,115HF-BJT
Trans RF BJT NPN 2.8V 0.04A 136mW 4-Pin SO T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.35(Max) mm |
| Verpackungslänge | 2.2(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SO |
| 4 | |
| Leitungsform | Gull-wing |
Superior characteristics of this BFU725F/N1,115 RF amplifier from NXP Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |