| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.75 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.33(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN_C |
| Stiftanzahl | 3 |
| Leitungsform | No Lead |
Compared to other transistors, the BFU730LXZ RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 150 °C.
