NXP SemiconductorsBFU760F,115HF-BJT
Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 10 | |
| 2.8 | |
| <20 | |
| 1 | |
| 0.07 | |
| 0.06 to 0.12 | |
| 100 | |
| 2.5V/50mA | |
| 155@10mA@2V | |
| 120 to 200 | |
| 1.045 | |
| 0.175 | |
| 220 | |
| 18.5(Typ) | |
| 25.5 | |
| 33(Typ) | |
| 45000(Typ) | |
| 0.75(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFP |
| Lieferantenverpackung | DFP |
| 4 |
This BFU760F,115 RF amplifier from NXP Semiconductors is designed to operate at higher RF frequencies. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |