NXP SemiconductorsBFU910FXHF-BJT

Trans RF BJT NPN 9.5V 0.015A 300mW 4-Pin DFP T/R

Designed with semiconductor technology, this BFU910FX RF amplifier from NXP Semiconductors easily operates at high RF frequencies. This product's minimum DC current gain is 655. It has a maximum collector emitter saturation voltage of 1 V. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 85 °C.

A datasheet is only available for this product at this time.