Infineon Technologies AGBSC097N06NSATMA1MOSFETs
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 3.3 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 9.7@10V | |
| 12@10V | |
| 12 | |
| 2.6 | |
| 4.5 | |
| 30 | |
| 4.7 | |
| 860@30V | |
| 16@30V | |
| 2.1 | |
| 210 | |
| 2500 | |
| 2 | |
| 2 | |
| 10 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.5 | |
| 184 | |
| 50 | |
| 1 | |
| 5.2 | |
| 33 | |
| 1.2 | |
| 2.8 | |
| 1.7 | |
| 20 | |
| 12 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this BSC097N06NSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |