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Infineon Technologies AGBSC600N25NS3GATMA1MOSFETs
Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 25 | |
| 60@10V | |
| 22@10V | |
| 22 | |
| 1770@100V | |
| 125000 | |
| 8 | |
| 10 | |
| 22 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 100 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
As an alternative to traditional transistors, the BSC600N25NS3GATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |