Infineon Technologies AGBSP61H6327XTSA1Darlington BJT
Trans Darlington PNP 60V 1A 1500mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
If you require a higher current gain value in your circuit, then the PNP BSP61H6327XTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA|2.2@1mA@1A V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.55mA@500mA|1.8@1mA@1A V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |