Diodes IncorporatedBSR33TAGP BJT
Trans GP BJT PNP 80V 1A 2100mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 90 | |
| 80 | |
| 5 | |
| 1.2@50mA@500mA|1@15mA@150mA | |
| 0.25@15mA@150mA|0.5@50mA@500mA | |
| 1 | |
| 100@100mA@5V|30@100uA@5V|50@500mA@5V | |
| 2100 | |
| 100(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the PNP BSR33TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |