Diodes IncorporatedBST39TAGP BJT
Trans GP BJT NPN 350V 0.5A 2000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 400 | |
| 350 | |
| 7 | |
| 1.3@4mA@50mA | |
| 0.5@4mA@50mA | |
| 0.5 | |
| 40 | |
| 2000 | |
| 70(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Use this versatile NPN BST39TA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |