Infineon Technologies AGBSZ065N03LSATMA1MOSFETs
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 6.5@10V | |
| 10@10V|5.2@4.5V | |
| 10 | |
| 1.7 | |
| 1.9 | |
| 10 | |
| 2.6 | |
| 670@15V | |
| 40@15V | |
| 1.2 | |
| 270 | |
| 2100 | |
| 2.4 | |
| 3.4 | |
| 12 | |
| 2.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.1 | |
| 196 | |
| 60 | |
| 0.89 | |
| 2.9 | |
| 1 | |
| 0.5 | |
| 2 | |
| 20 | |
| 12 | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 3.4(Max) |
| Verpackungslänge | 3.4(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
Amplify electronic signals and switch between them with the help of Infineon Technologies' BSZ065N03LSATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |