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Infineon Technologies AGBSZ100N06LS3GATMA1MOSFETs
Trans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.2 | |
| -55 to 150 | |
| 11 | |
| 100 | |
| 1 | |
| 10@10V | |
| 15@4.5V|34@10V | |
| 34 | |
| 3 | |
| 8 | |
| 27 | |
| 7 | |
| 2600@30V | |
| 24@30V | |
| 1.2 | |
| 500 | |
| 2100 | |
| 8 | |
| 58 | |
| 19 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.1 | |
| 80 | |
| 60 | |
| 0.9 | |
| 3.3 | |
| 30 | |
| 1.2 | |
| 1.7 | |
| 20 | |
| 11 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 3.3 |
| Verpackungslänge | 3.3 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the BSZ100N06LS3GATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |