Infineon Technologies AGBSZ900N20NS3GATMA1MOSFETs
Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 15.2 | |
| 90@10V | |
| 8.7@10V | |
| 8.7 | |
| 690@100V | |
| 62500 | |
| 3 | |
| 4 | |
| 10 | |
| 5 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 3.3 |
| Verpackungslänge | 3.3 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
This BSZ900N20NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 62500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |