onsemiBU323ZGDarlington BJT
Trans Darlington NPN 350V 10A 150000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Amplify your current with the NPN BU323ZG Darlington transistor, developed by ON Semiconductor. This Darlington transistor array's maximum emitter base voltage is 6 V, while its maximum base emitter saturation voltage is 2.2@100mA@8A|2.5@0.25A@10A V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 150@6.5A@1.5 V|500@5A@4.6V. It has a maximum collector emitter saturation voltage of 1.6@70mA@7A|1.8@0.1A@8A|1.7@0.25A@10A V. Its maximum power dissipation is 150000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |