| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
STMicroelectronics brings you their latest NPN BU941ZT Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.2@100mA@8A|2.5@250mA@10A V. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 300@5A@10 V. It has a maximum collector emitter saturation voltage of 1.8@100mA@8A|1.8@250mA@10A V. Its maximum power dissipation is 150000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C.
| EDA / CAD Models |