STMicroelectronicsBUL128D-BGP BJT
Trans GP BJT NPN 400V 4A 70000mW 3-Pin(3+Tab) TO-220AB Tube
Compliant with Exemption | |
EAR99 | |
Obsolete | |
8541.21.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single | |
1 | |
700 | |
400 | |
9 | |
1.1@0.1A@0.5A|1.2@0.2A@1A|1.3@0.5A@2.5A | |
0.5(Typ)@1A@4A|0.7@0.1A@0.5A|1.5@0.5A@2.5A|1@0.2A@1A | |
4 | |
10@10mA@5V|12@2A@5V | |
70000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Befestigung | Through Hole |
Verpackungshöhe | 9.15(Max) |
Verpackungsbreite | 4.6(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
Thanks to STMicroelectronics, your circuit can handle high levels of voltage using the NPN BUL128D-B general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 70000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
EDA / CAD Models |