STMicroelectronicsBUL38DGP BJT
Trans GP BJT NPN 450V 5A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.21.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single | |
1 | |
800 | |
450 | |
9 | |
1.1@0.2A@1A|1.2@0.4A@2A | |
0.5@0.2A@1A|0.7@0.4A@2A|1.1@0.75A@3A | |
5 | |
10@0.5A@5V|10@10mA@5V|10@2A@5V | |
80000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Befestigung | Through Hole |
Verpackungshöhe | 9.15(Max) |
Verpackungsbreite | 4.6(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN BUL38D general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V.
EDA / CAD Models |