STMicroelectronicsBUL38DGP BJT

Trans GP BJT NPN 450V 5A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Do you require a transistor in your circuit operating in the high-voltage range? This NPN BUL38D general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V.

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1.900 Stück: morgen versandbereit

    Total0,86 €Price for 1

    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2204+
      Manufacturer Lead Time:
      14 Wochen
      Country Of origin:
      China
      • In Stock: 1.900 Stück
      • Price: 0,8637 €