STMicroelectronicsBULB49DT4GP BJT
Trans GP BJT NPN 450V 5A 80000mW 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 450 | |
| 10 | |
| 1.3@0.8A@4A|1@0.2A@1A | |
| 0.3@0.2A@1A|0.6@0.4A@2A|1.2@0.8A@4A | |
| 5 | |
| 10@10mA@5V|4@7A@10V | |
| 80000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) |
| Verpackungsbreite | 9.35(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BULB49DT4 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 10 V. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |