STMicroelectronicsBULB7216T4GP BJT
Trans GP BJT NPN 700V 3A 80000mW 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 700 | |
| 12 | |
| 1@100mA@0.5A|1.1@100mA@1A|1.2@400mA@2A | |
| 1@25mA@0.25A|1.5@50mA@0.5A|3@80mA@0.8A | |
| 3 | |
| 7@0.5A@1V|16@0.5A@3V|4@2A@5V|19@1A@10V | |
| 80000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) mm |
| Verpackungsbreite | 9.35(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
This specially engineered NPN BULB7216T4 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 80000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 700 V and a maximum emitter base voltage of 12 V.
| EDA / CAD Models |