STMicroelectronicsBULD742CT4GP BJT
Trans GP BJT NPN 400V 4A 45000mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 15 | |
| 1.5@1A@3.5A | |
| 0.5@0.2A@1A|1.5@1A@3.5A | |
| 4 | |
| 25@0.8A@3V|48@0.1A@5V | |
| 45000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
STMicroelectronics has the solution to your circuit's high-voltage requirements with their NPN BULD742CT4 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 15 V. Its maximum power dissipation is 45000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 15 V.
| EDA / CAD Models |