STMicroelectronicsBUT30VGP BJT
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 200 | |
| 125 | |
| 7 | |
| 1.4@2.5A@50A|1.8@10A@100A|1.9@10A@100A | |
| 0.9@10A@100A|0.9@2.5A@50A|1.2@2.5A@50A|1.5@10A@100A | |
| 100 | |
| 27(Typ)@100A@5V | |
| 250000 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Screw |
| Verpackungshöhe | 9.1(Max) |
| Verpackungsbreite | 25.5(Max) |
| Verpackungslänge | 38.2(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | ISOTOP |
| 4 |
Add switching and amplifying capabilities to your electronic circuit with this NPN BUT30V GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 125 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |