Central SemiconductorCET3906E TRGP BJT
Trans GP BJT PNP 40V 0.2A 430mW 3-Pin SOT-883L T/R
| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.35(Max) |
| Verpackungsbreite | 0.65(Max) |
| Verpackungslänge | 1.05(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-883L |
| 3 | |
| Leitungsform | No Lead |
Use this versatile PNP CET3906E TR GP BJT from Central Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 430 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |