Central SemiconductorCMPT5551TRGP BJT
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R
| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.6 | |
| 50 | |
| 30@50mA@5V|80@10mA@5V|80@1mA@5V | |
| 350 | |
| 300 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.99(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.05(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN CMPT5551TR GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |