onsemiCPH3109-TL-EGP BJT

Trans GP BJT PNP 30V 3A 900mW 3-Pin CPH T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP CPH3109-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

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2.546 Stück: Versand in vsl. 10 Tagen

This item has been discontinued

    Total0,25 €Price for 1

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1540+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 2.546 Stück
      • Price: 0,2544 €