onsemiCPH3116-TL-EGP BJT

Trans GP BJT PNP 50V 1A 900mW 3-Pin CPH T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP CPH3116-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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3.000 Stück: heute versandbereit

    Total366,30 €Price for 3000

    • (3000)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2402+
      Manufacturer Lead Time:
      28 Wochen
      Country Of origin:
      China
      • In Stock: 3.000 Stück
      • Price: 0,1221 €