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onsemiCPH5504-TL-EGP BJT

Trans GP BJT NPN 50V 3A 1200mW 5-Pin CPH T/R

The three terminals of this NPN CPH5504-TL-E GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part if shipping to the United States

7 Stück: heute versandbereit

This item has been discontinued

    Total0,02 €Price for 1

    • Service Fee  6,32 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1615+
      Manufacturer Lead Time:
      99 Wochen
      Minimum Of :
      1
      Maximum Of:
      7
      Country Of origin:
      China
         
      • Price: 0,0223 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1615+
      Manufacturer Lead Time:
      99 Wochen
      Country Of origin:
      China
      • In Stock: 7 Stück
      • Price: 0,0223 €