| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | EA |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | CPH |
| Stiftanzahl | 6 |
| Leitungsform | Gull-wing |
Implement this versatile NPN CPH6003A-TL-E GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 2 V. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 2 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
