EAR99 | |
Active | |
Automotive | No |
PPAP | No |
Small Signal | |
Single | |
FemtoFET | |
Enhancement | |
N | |
1 | |
12 | |
8 | |
1.1 | |
2.1 | |
50 | |
0.1 | |
180@4.5V | |
1.06@4.5V | |
0.14 | |
155@6V | |
500 | |
3.8 | |
1.5 | |
11 | |
3.7 | |
-55 | |
150 | |
Tape and Reel | |
0.85 | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.35(Max) |
Verpackungsbreite | 1.04(Max) |
Verpackungslänge | 0.64(Max) |
Leiterplatte geändert | 3 |
Lieferantenverpackung | PicoStar |
3 |
Compared to traditional transistors, CSD13381F4 power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.