| ECCN (USA) | EAR99 |
| Part Status | Active |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.35 |
| Verpackungsbreite | 1.74 |
| Verpackungslänge | 2.32 |
| Leiterplatte geändert | 12 |
| Standard-Verpackungsname | Die |
| Lieferantenverpackung | Wafer |
| Stiftanzahl | 12 |
Increase the current or voltage in your circuit with this CSD86311W1723 power MOSFET from Texas Instruments. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
