RoHS EU | Compliant |
ECCN (USA) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 1.5(Max) |
Verpackungsbreite | 3.98(Max) |
Verpackungslänge | 5(Max) |
Leiterplatte geändert | 8 |
Standard-Verpackungsname | SO |
Lieferantenverpackung | SOIC |
Stiftanzahl | 8 |
Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD88537ND power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology.