Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Through Hole |
Verpackungshöhe | 9.28(Max) mm |
Verpackungsbreite | 4.83(Max) mm |
Verpackungslänge | 10.53(Max) mm |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
This NPN D44H8G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |