| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8536.30.80.00 |
| Automotive | No |
| PPAP | No |
| Konfiguration | Quad |
| Richtungsart | Uni-Directional |
| Anzahl von Elementen pro Chip | 4 |
| Max. Betriebsspannung (V) | 5 |
| Mindestdurchbruchsspannung (V) | 6 |
| Max. Klemmspannung (V) | 24.6 |
| Max. Spitzenimpulsstrom (A) | 45 |
| Max. Kriechstrom (uA) | 200 |
| Prüfstrom (mA) | 1 |
| Spitzenimpulsaufnahmeleistung (W) | 800 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.43(Max) |
| Verpackungsbreite | 6.85(Max) |
| Verpackungslänge | 19.55(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | PDIP |
| Stiftanzahl | 16 |
| Leitungsform | Through Hole |
Protect your critical electronic applications from sudden overvoltage conditions with this DA05N-LF TVS diode from ProTek Devices. This device's maximum clamping voltage is 24.6 V and minimum breakdown voltage is 6 V. Its peak pulse power dissipation is 800 W. Its test current is 1 mA. Its maximum leakage current is 200 μA. This TVS diode has an operating temperature range of -55 °C to 150 °C.
