| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8536.30.80.00 |
| Automotive | No |
| PPAP | No |
| Konfiguration | Hex |
| Richtungsart | Uni-Directional |
| Anzahl von Elementen pro Chip | 6 |
| Max. Betriebsspannung (V) | 12 |
| Mindestdurchbruchsspannung (V) | 13.3 |
| Max. Klemmspannung (V) | 32.9 |
| Max. Spitzenimpulsstrom (A) | 34 |
| Max. Kriechstrom (uA) | 2 |
| Prüfstrom (mA) | 1 |
| Spitzenimpulsaufnahmeleistung (W) | 800 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.08(Max) - 0.51(Min) |
| Verpackungsbreite | 6.6(Max) |
| Verpackungslänge | 10.2(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | PDIP |
| Stiftanzahl | 8 |
| Leitungsform | Through Hole |
ProTek Devices' DA12M-LF TVS diode is designed to protect electronic components and circuits from electrical overstress from overvoltage and electrostatic discharge. Its test current is 1 mA. Its maximum leakage current is 2 μA. Its peak pulse power dissipation is 800 W. This device's maximum clamping voltage is 32.9 V and minimum breakdown voltage is 13.3 V. This TVS diode has a minimum operating temperature of -55 °C and a maximum of 150 °C.
