| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.50 |
| Automotive | No |
| PPAP | No |
| Typ | Zener |
| Konfiguration | Dual Common Anode |
| Richtungsart | Uni-Directional |
| Anzahl von Elementen pro Chip | 2 |
| Max. Betriebsspannung (V) | 2.5 |
| Max. Kriechstrom (uA) | 1 |
| Max. Leistungsaufnahme (mW) | 100 |
| Kapazitätswert (pF) | 65(Typ) |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 125 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | USM |
| Stiftanzahl | 3 |
This DF3A5.6FU(TE85L,F) zener diode from Toshiba is perfect for blocking a voltage. Its maximum leakage current is 1 μA. Its test current is 5 mA. Its maximum power dissipation is 100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This zener diode has a minimum operating temperature of -55 °C and a maximum of 125 °C. It is made in a dual common anode configuration. This zener device has a nominal voltage of 5.6 V and a voltage tolerance of 6%.
