RoHS EU | Compliant |
ECCN (USA) | EAR99 |
Part Status | Active |
HTS | 8541.10.00.50 |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 0.9 |
Verpackungsbreite | 1.25 |
Verpackungslänge | 2 |
Leiterplatte geändert | 3 |
Lieferantenverpackung | USM |
Stiftanzahl | 3 |
This DF3A5.6FU(TE85L,F) zener diode from Toshiba is perfect for blocking a voltage. Its maximum leakage current is 1 μA. Its test current is 5 mA. Its maximum power dissipation is 100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This zener diode has a minimum operating temperature of -55 °C and a maximum of 125 °C. It is made in a dual common anode configuration. This zener device has a nominal voltage of 5.6 V and a voltage tolerance of 6%.