Diodes IncorporatedDJT4030P-13GP BJT
Trans GP BJT PNP 40V 3A 1200mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| 1@0.1A@1A | |
| 0.15@5mA@0.5A|0.2@10mA@1A|0.5@0.3A@3A | |
| 3 | |
| 100 | |
| 100@3A@1V|200@1A@1V|220@0.5A@1V | |
| 1200 | |
| 150(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
This PNP DJT4030P-13 general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |