Diodes IncorporatedDMMT5401-7-FGP BJT
Trans GP BJT PNP 150V 0.2A 300mW 6-Pin SOT-26 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 160 | |
| 150 | |
| 5 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.2@1mA@10mA|0.5@5mA@50mA | |
| 0.2 | |
| 50 | |
| 50@1mA@5V|50@50mA@5V|60@10mA@5V | |
| 300 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1 |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-26 |
| 6 | |
| Leitungsform | Gull-wing |
Implement this versatile PNP DMMT5401-7-F GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |