Diodes IncorporatedDSS2540M-7BGP BJT
Trans GP BJT NPN 40V 0.5A 1000mW 3-Pin DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| 1.2@50mA@500mA | |
| 0.05@0.5mA@10mA|0.1@5mA@100mA|0.25@50mA@500mA|0.2@10mA@200mA | |
| 0.5 | |
| 150@100mA@2V|200@10mA@2V|50@500mA@2V | |
| 250 | |
| 300(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.47 |
| Verpackungsbreite | 1 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN |
| 3 | |
| Leitungsform | No Lead |
Design various electronic circuits with this versatile NPN DSS2540M-7B GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |