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Diodes IncorporatedDSS4160T-7GP BJT

Trans GP BJT NPN 60V 1A 725mW 3-Pin SOT-23 T/R

Implement this versatile NPN DSS4160T-7 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 725 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.