onsemiDTC114YM3T5GDigital-BJT
Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 10 | |
| -55 to 150 | |
| 0.21 | |
| 0.25@0.3mA@10mA | |
| 600 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.5 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-723 |
| 3 | |
| Leitungsform | Flat |
ON Semiconductor's NPN DTC114YM3T5G digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |