onsemiDTC115EET1GDigital-BJT
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-416 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to ON Semiconductor's NPN DTC115EET1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |