Diodes IncorporatedDXT5551P5-13GP BJT
Trans GP BJT NPN 160V 0.6A 2250mW 3-Pin(2+Tab) PowerDI 5 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) mm |
| Verpackungsbreite | 5.37 mm |
| Verpackungslänge | 3.97 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Lieferantenverpackung | PowerDI 5 |
| 3 |
Implement this NPN DXT5551P5-13 GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |