Diodes IncorporatedFCX1053ATAGP BJT
Trans GP BJT NPN 75V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.21.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single Dual Collector | |
1 | |
150 | |
75 | |
5 | |
1@100mA@3A | |
0.03@20mA@0.2A|0.075@20mA@0.5A|0.21@100mA@2A|0.2@10mA@1A|0.44@200mA@4.5A | |
3 | |
10 | |
270@10mA@2V|300@1A@2V|300@500mA@2V|40@4.5A@2V | |
1600 | |
140(Typ) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.5 |
Verpackungsbreite | 2.5 |
Verpackungslänge | 4.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-89 |
4 | |
Leitungsform | Flat |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's NPN FCX1053ATA general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.